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caution observe precautions when handling because these devices are sensitive to electrostatic discharge. npn silicon germanium rf transistor nesg270034 npn sige rf transistor for medium output power amplification (2 w) 3-pin power minimold (34 pkg) features ? this product is suitable for medium output power (2 w) amplification p out = 33.5 dbm typ. @ v ce = 6 v, p in = 20 dbm, f = 460 mhz p out = 31.5 dbm typ. @ v ce = 6 v, p in = 20 dbm, f = 900 mhz ? using uhs2-hv process (sige technology), v cbo (absolute maximum ratings) = 25 v ? 3-pin power minimold (34 pkg) ordering information part number order number package quantity supplying form nesg270034 nesg270034-az 3-pin power minimold (34 pkg) (pb-free) note 25 pcs (non reel) ? magazine case nesg270034-t1 NESG270034-T1-AZ 1 kpcs/reel ? 12 mm wide embossed taping ? pin 2 (emitter) face the perforation side of the tape note contains lead in the part exc ept the electrode terminals. remark to order evaluation samples, contact your nearby sales office. unit sample quantity is 25 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 9.2 v emitter to base voltage v ebo 2.8 v collector current i c 750 ma total power dissipation p tot note 1.9 w junction temperature t j 150 c storage temperature t stg ?65 to +150 c note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb document no. pu10577ej02v0ds (2nd edition) date published december 2007 ns 2005, 2007 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and spec ifying it in the "find what:" field.
nesg270034 thermal resistance (t a = +25 c) parameter symbol ratings unit termal resistance from junction to ambient note rth j-a 65 c/w note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb recommended operating range (t a = +25 c) parameter symbol min. typ. max. unit collector to emitter voltage v ce ? 6.0 7.2 v collector current i c ? 600 750 ma input power note p in ? 20 23 dbm note input power under conditions of v ce 6.0 v, f = 460 mhz data sheet pu10577ej02v0ds 2
nesg270034 electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 9.2 v, i e = 0 ma ? ? 1 a emitter cut-off current i ebo v eb = 1.0 v, i c = 0 ma ? ? 1 a dc current gain h fe note v ce = 3 v, i c = 100 ma 80 120 180 ? rf characteristics linner gain (1) g l v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 0 dbm 17.5 19.5 ? db linner gain (2) g l v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 0 dbm ? 15 ? db output power (1) p out v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 20 dbm 31.5 33.5 ? dbm output power (2) p out v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 31.5 ? dbm collector efficiency (1) c v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 20 dbm ? 60 ? % collector efficiency (2) c v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 50 ? % note pulse measurement: pw 350 s, duty cycle 2% h fe classification rank fb marking sq h fe value 80 to 180 data sheet pu10577ej02v0ds 3
nesg270034 typical characteristics (t a = +25 c, unless otherwise specified) 2.0 1.6 1.2 0.8 0.4 0 25 50 75 100 125 150 175 3.0 1.5 0.5 02468 2.5 2.0 1.0 10 f = 1 mhz 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 1 000 v ce = 3 v 1 000 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 5 v 1 000 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 6 v 1 000 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 7 v total power dissipation p tot (w) total power dissipation vs. ambient temperature free air mounted on glass epoxy pwb (34.2 cm 2 0.8 mm (t) ) ambient temperature t a (?c) reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage remark the graph indicates nominal characteristics. data sheet pu10577ej02v0ds 4
nesg270034 800 700 600 500 400 300 200 100 02 135678910 4 v ce = 5 v 1 000 100 10 100 10 1 000 100 10 1 000 v ce = 6 v v ce = 7 v 100 10 1 000 1 000 100 10 1 000 100 10 collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current 20 15 10 5 0 10 100 1 000 v ce = 6 v f = 460 mhz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 3 ma 2 ma 5 ma 4 ma 7 ma 6 ma 9 ma 8 ma 10 ma i b = 1 ma remark the graph indicates nominal characteristics. data sheet pu10577ej02v0ds 5
nesg270034 40 30 25 20 15 10 5 0 0.1 1.0 10 35 v ce = 6 v i c = 100 ma |s 21e | 2 |s 21e | 2 v ce = 6 v i c = 400 ma |s 21e | 2 v ce = 6 v f = 460 mhz 40 30 25 20 15 10 5 0 0.1 1.0 10 35 v ce = 6 v i c = 200 ma 10 100 1 000 30 0 5 10 15 20 25 40 30 25 20 15 10 5 0 0.1 1.0 10 35 |s 21e | 2 frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) mag mag msg mag msg msg msg mag frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graph indicates nominal characteristics. data sheet pu10577ej02v0ds 6
nesg270034 s-parameters s-parameters/noise parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/microwave/index.html pa evaluation circuit typical characteristics input power p in (dbm) collector current i c (ma), collector efficiency c (%) output power, collector current, collector efficiency vs. input power output power p out (dbm) 15 50 35 30 25 20 15 10 1 000 800 600 400 200 0 10 25 20 p out i c c v ce = 6 v, f = 460 mhz i c (set) = 30 ma remark the graph indicates nominal characteristics. data sheet pu10577ej02v0ds 7
nesg270034 evaluation circuit (f = 460 mhz) rf in c1 v be c4 l1 rf out c2 c3 v ce l2 r1 r2 c5 l4 l3 t he application circuits and their parameters are for reference only and are not intended for use in actual design-in s. evaluation board (f = 460 mhz) gnd v be 34-04 v ce gnd l3 r2 l1 l4 c5 c3 c2 c1 c4 l2 r1 sq notes 1. 38 38 mm, t = 0.8 mm double sided copper clad glass epoxy pwb. 2. back side: gnd pattern 3. solder gold plated on pattern 4. : through holes data sheet pu10577ej02v0ds 8
nesg270034 component list component maker value size (type) purpose c1 murata 11 pf 1005 input dc block/input rf matching c2 murata 9.5 pf 1005 input rf matching c3 murata 39 pf 1005 input dc block/output rf matching c4 murata 10 000 pf 1005 rf gnd c5 murata 10 000 pf 1005 rf gnd l1 toko 390 nh 2012 rf block/input rf matching l2 toko 47 nh 1608 rf block/output rf matching l3 toko 5.6 nh 2012 input rf matching l4 toko 5.1 nh 1608 output rf matching r1 ssm 15 1005 improve stability r2 ssm 10 1005 improve stability data sheet pu10577ej02v0ds 9
data sheet pu10577ej02v0ds 10 nesg270034 package dimensions 3-pin power minimold (34 pkg) (unit: mm) pin connections 1. collector 2. emitter 3. base 1.5?.1 0.41 +0.03 ?.06 4.5?.1 0.42?.06 0.42?.06 1.6?.2 3.0 1.5 2 13 2.5?.1 4.0?.25 0.8 min. 0.47?.06
nesg270034 the information in this document is current as of december, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":

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